FDD8870 Key Features
- r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A
- r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A
- High performance trench technology for extremely low r DS(ON)
- Low gate charge
- Part: FDD8870
- Description: N-Channel PowerTrench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 464.85 KB
Other FDD8870 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDD8870-F085 | N-Channel MOSFET |