FCPF11N65
Features
- Typ. RDS(on) = 320 mΩ
- Ultra Low Gate Charge (Typ. Qg = 40 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 p F)
- 100% Avalanche Tested
Description
Super FET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications.
TO-220F
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
VGSS EAS IAR EAR dv/dt
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current...
