FCPF11N60F
Features
- 600 V @ TJ = 150°C
- Typ. RDS(on) = 320 mΩ
- Fast Recovery Type (trr = 120 ns)
- Ultra Low Gate Charge (Typ. Qg = 40 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 p F)
- 100% Avalanche Tested
- Ro HS pliant
Applications
- LCD/LED/PDP TV
- Lighting
- Solar Inverter
- AC-DC Power Supply
Description
Super FET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. Super FET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional ponent and improve system...
