FCPF11N60
Description
Super FET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, Super FET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications.
Features
- 650V @Tj = 150°C
- Typ. Rds(on)=0.32Ω
- Ultra low gate charge (typ. Qg=40n C)
- Low effective output capacitance (typ. Coss.eff=95p F)
- 100% avalanche tested
- Ro HS pliant
TO-220
GDS TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
ID Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single...
