FCPF11N60NT
Features
- RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
- Ultra Low Gate Charge (Typ. Qg = 27.4 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 130 p F)
- 100% Avalanche Tested
- Ro HS pliant
Application
- LCD/LED/PDP TV
- Lighting
- Solar Inverter
- AC-DC Power Supply
Description
The Supre MOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. Supre MOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/tele power, FPD TV power, ATX power, and industrial power applications.
TO-220
TO-220F
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS VGSS
IDM EAS IAR EAR dv/dt
Parameter
Drain to Source Voltage
Gate...
