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PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor
Description
The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
0.4 Watt, 1.8–2.0 GHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs. Input Power
1.0
Output Power (Watts)
0.8 0.6 0.4 0.2 0.0 0.00
VCC = 26 V IC = 120 mA f = 2.0 GHz
20 17 9
LO TC OD E
0.02
0.04
0.06
0.08
0.10
0.
PTB20179 Datasheet
