Datasheet4U Logo Datasheet4U.com

PTB20171 - 25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

Description

The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz.

Rated at 25 watts minimum output power, it may be used for both CW and PEP applications.

📥 Download Datasheet

Datasheet Details

Part number PTB20171
Manufacturer Ericsson
File Size 43.99 KB
Description 25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20171 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTB23001X NPN microwave power transistors NXP
PTB23002U NPN microwave power transistor NXP
PTB23003X NPN microwave power transistor NXP
PTB23003X NPN microwave power transistors NXP
PTB23005X NPN microwave power transistors NXP

Other Datasheets by Ericsson

Part Number Description
PTB20170 30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
PTB20174 90 Watts/ 1400-1600 MHz RF Power Transistor
PTB20175 55 Watts/ 1.9-2.0 GHz Cellular Radio RF Power Transistor
PTB20176 5 Watts/ 1.78-1.92 GHz RF Power Transistor
PTB20177 150 Watts/ 925-960 MHz Cellular Radio RF Power Transistor

Full PDF Text Transcription

Click to expand full text
e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 25 Watts, 935–960 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs.
Published: |