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PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor
Description
The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
30 Watts, 1.8–2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
40
Output Power (Watts)
35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7
2017
LOT COD E
0
VCC = 26 V ICQ = 100 mA f = 2.
PTB20170 Datasheet
