Click to expand full text
e
PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor
Description
The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
55 Watts, 1.9–2.0 GHz Class AB Characteristics 40% Collector Efficiency at 55 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
Output Power (Watts)
60 50 40 30 20 10 2 4 6 8 10 12 14
201 75
LOT COD E
VCC = 26 V ICQ = 0.
PTB20175 Datasheet
