Datasheet4U Logo Datasheet4U.com

BTC4620T3 - NPN Transistor

Features

  • High breakdown voltage. (BVCEO =350V).
  • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
  • Complementary to BTA1776T3 Symbol BTC4620T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol V.

📥 Download Datasheet

Datasheet Details

Part number BTC4620T3
Manufacturer Cystech Electonics Corp
File Size 165.91 KB
Description NPN Transistor
Datasheet download datasheet BTC4620T3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTC4621K3 High Voltage NPN Epitaxial Planar Transistor CYStech
BTC401N Gas Discharge Tube BORN
BTC4226S3 NPN Silicon Epitaxial Planar Transistor CYStech
BTC4401A3 General Purpose NPN Epitaxial Planar Transistor CYStech
BTC4505N3 High Voltage Transistor Comchip Technology

Other Datasheets by Cystech Electonics Corp

Part Number Description
BTC4620D3 NPN Transistor
BTC4617C3 NPN Transistor
BTC4672M3 NPN Transistor
BTC4061N3 NPN Transistor
BTC4062N3 NPN Transistor

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210T3 www.DataSheet4U.com Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 1/4 BTC4620T3 Features • High breakdown voltage. (BVCEO =350V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Complementary to BTA1776T3 Symbol BTC4620T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limit 350 350 5 100 200 1.
Published: |