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CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C231N3R www.DataSheet4U.com Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 1/5
BTC4062N3
Features
• High Breakdown Voltage:BVCEO≥350V • Complementary to BTA1722N3 • Pb-free package
Symbol
BTC4062N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW °C °C
BTC4062N3
CYStek Product Specification
CYStech Electronics Corp.
BTC4062N3 Datasheet
