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BTC4505N3 - High Voltage Transistor

Features

  • High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C.

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Datasheet Details

Part number BTC4505N3
Manufacturer Comchip Technology
File Size 66.01 KB
Description High Voltage Transistor
Datasheet download datasheet BTC4505N3 Datasheet

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High Voltage Transistor (NPN) BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C COMCHIP www.comchiptech.com COLLECTOR 3 1 BASE SOT-23 .119 (3.0) .110 (2.8) 2 EMITTER .020 (0.5) Top View .056 (1.40) .047 (1.20) .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) .006 (0.15)max. .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 0.225 150 -55~+150 MDS0405003A Page 1 .044 (1.10) .035 (0.
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