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BTC4505M3 - NPN Transistor

Features

  • High breakdown voltage, BVCEO (min)=400V.
  • Low saturation voltage, typically VCE(sat) =0.14V at IC/IB=50mA/5mA.
  • Complementary to BTA1759M3.
  • Pb-free lead plating and halogen-free package. Symbol BTC4505M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device Package Shipping BTC4505M3-0-T2-G SOT-89 1000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS com.

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Datasheet Details

Part number BTC4505M3
Manufacturer Cystech Electonics Corp
File Size 381.37 KB
Description NPN Transistor
Datasheet download datasheet BTC4505M3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2014.07.24 Page No. : 1/6 Features  High breakdown voltage, BVCEO (min)=400V.  Low saturation voltage, typically VCE(sat) =0.14V at IC/IB=50mA/5mA.  Complementary to BTA1759M3.  Pb-free lead plating and halogen-free package.
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