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BTC4621K3 - High Voltage NPN Epitaxial Planar Transistor

Features

  • High breakdown voltage. (BVCEO =350V).
  • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
  • Pb-free package Symbol BTC4621K3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg BTC4621K3.

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Datasheet Details

Part number BTC4621K3
Manufacturer CYStech
File Size 165.67 KB
Description High Voltage NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC4621K3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4621K3 Spec. No. : C210K3 Issued Date : 2006.12.08 Revised Date : Page No. : 1/4 Features • High breakdown voltage. (BVCEO =350V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Pb-free package Symbol BTC4621K3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg BTC4621K3 Limit 350 350 6 100 200 50 1 150 -55~+150 Unit V V V mA mA W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No.
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