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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTC1664M3
Spec. No. : C223M3-A Issued Date : 2007.05.02 Revised Date : 2013.08.06 Page No. : 1/6
Features
• Low VCE(sat), VCE(sat)=0.25V (typical), at IC / IB = 500mA / 20mA • Pb-free lead plating package
Symbol
BTC1664M3
Outline
SOT-89
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Symbol VCBO VCEO VEBO
IC ICP
PD
RθJA
Tj;Tstg
Limits
50 28 6 2 4 (Note 1) 0.6 1.5 (Note 2) 2.1 (Note 3)
208 83.3 *2 59.5 *3
-55~+150
Unit V V V A A W W
°C
Note : 1.
BTC1664M3 Datasheet
