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BTC4102S3 - NPN Transistor

Description

The BTC4102S3 is designed for high voltage amplification application.

Features

  • High breakdown voltage. (BVCEO=120V).
  • Complementary to BTA1579S3 Symbol BTC4102S3 Outline SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 120 120 5 50 200 150 -55~+150 Unit V V V mA mW °C °C BTC4102S3 CYStek Product Specification CYStech Electronics.

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Datasheet Details

Part number BTC4102S3
Manufacturer Cystech Electonics Corp
File Size 181.00 KB
Description NPN Transistor
Datasheet download datasheet BTC4102S3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208S3 www.DataSheet4U.com Issued Date : 2003.06.11 Revised Date : Page No. : 1/4 BTC4102S3 Description The BTC4102S3 is designed for high voltage amplification application. Features • High breakdown voltage. (BVCEO=120V) • Complementary to BTA1579S3 Symbol BTC4102S3 Outline SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 120 120 5 50 200 150 -55~+150 Unit V V V mA mW °C °C BTC4102S3 CYStek Product Specification CYStech Electronics Corp.
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