-High density cell design for low R DS(ON) . -Voltage control small signal switch. -Rugged and reliable. -High saturation current capability. 0.054(1.35) 0.045(1.15) 0.087(2.20) 0.070(1.80)
SOT-323
D
Marking: K72 Equivalent Circuit
D
0.044(1.10) 0.035(0.90)
G
0.056(1.40) 0.047(1.20)
S
0.006(0.15) 0.002(0.05)
0.087(2.20) 0.078(2.00)
G S
G : Gate S : Source D : Drain
O
0.016(0.40) 0.008(0.20)
0.004(0.10)max
0.004(0.10)min
Dimensions in inches and (millimeter)
Electrical Ratings (at T.
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MOSFET
COMCHIP
SMD Diodes Specialist
2N7002W-G (N-Channel)
RoHS Device
Features
-High density cell design for low R DS(ON) . -Voltage control small signal switch. -Rugged and reliable. -High saturation current capability.
0.054(1.35) 0.045(1.15) 0.087(2.20) 0.070(1.80)
SOT-323
D
Marking: K72 Equivalent Circuit
D
0.044(1.10) 0.035(0.90)
G
0.056(1.40) 0.047(1.20)
S
0.006(0.15) 0.002(0.05)
0.087(2.20) 0.078(2.00)
G S
G : Gate S : Source D : Drain
O
0.016(0.40) 0.008(0.20)
0.004(0.10)max
0.004(0.10)min
Dimensions in inches and (millimeter)
Electrical Ratings (at T A =25 C unless otherwise noted)
Parameter
Drain-Source voltage Drain current Power dissipation
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