2N7002W
FEATURES
- Low On-Resistance。
- Low Gate Threshold Voltage.
- Low Input Capacitance.
- Fast Switching Speed.
- Low Input/Output Leakage.
Pb
Lead-free
APPLICATIONS
- N-channel enhancement mode effect transistor.
- Switching application.
ORDERING INFORMATION
Type No.
Marking
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
VDGR VGSS ID PD
Drain-Gate voltage(RGS≤1MΩ)
Gate -Source voltage
- continuous -Non Repetitive (tp<50μs)
Maximum Drain current -continuous -Pulsed
Power Dissipation
±20 ±40 115 800
RθJA Thermal resistance,Junction-to-Ambient 625
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units V V V m A m W ℃/W ℃
F008 Rev.A
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