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BTB857T3 - PNP Transistor

Features

  • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A.
  • Excellent DC current gain characteristics.
  • Wide SOA.
  • RoHS compliant package Symbol BTB857T3 Outline TO-126 B：Base C：Collector E：Emitter E CB Ordering Information Device BTB857T3-0-BL-G BTB857T3-0-UH-G Package TO-126 (Pb-free lead plating and halogen-free package) Shipping 200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton 60 pcs/ tube, 40 tubes/box Environment friendly grade : S for RoHS compliant produ.

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Datasheet Details

Part number BTB857T3
Manufacturer CYStech
File Size 303.80 KB
Description PNP Transistor
Datasheet download datasheet BTB857T3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB857T3 Spec. No. : C811T3 Issued Date : 2017.01.18 Revised Date : 2018.07.02 Page No. : 1/5 Features  Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.
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