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BTB818N6 - PNP Transistor

Features

  • Low VCE(sat), VCE(sat)=-0.2V (typical), at IC / IB =- 400mA /- 20mA.
  • Pb-free package Equivalent Circuit BTB818N6 Outline SOT-23-6L Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current VCEO VEBO IC ICM IBM -30 -7 -1.5 -3.
  • 1 -500 V V A A mA Power Dissipation PD 1.2.
  • 2 W Thermal Resistance, Junction to.

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Datasheet Details

Part number BTB818N6
Manufacturer CYStech
File Size 228.53 KB
Description PNP Transistor
Datasheet download datasheet BTB818N6 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB818N6 Spec. No. : C313N6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/7 Features • Low VCE(sat), VCE(sat)=-0.2V (typical), at IC / IB =- 400mA /- 20mA • Pb-free package Equivalent Circuit BTB818N6 Outline SOT-23-6L Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current VCEO VEBO IC ICM IBM -30 -7 -1.5 -3 *1 -500 V V A A mA Power Dissipation PD 1.2 *2 W Thermal Resistance, Junction to Ambient RθJA 104 °C/W Operating Junction and Storage Temperature Range Note :1 Single pulse, Pw=10ms Tj;Tstg -55~+150 °C 2. When mounted on 25mm×25mm×1.
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