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BTB826M3 - PNP Transistor

Features

  • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A.
  • Excellent current gain characteristics.
  • Pb-free lead plating package Symbol BTB826M3 Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation VCBO VCEO VEBO IC ICP Pd Power Dissipation Pd ESD susceptibility Junction.

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Datasheet Details

Part number BTB826M3
Manufacturer CYStech
File Size 208.51 KB
Description PNP Transistor
Datasheet download datasheet BTB826M3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB826M3 Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date :2013.08.12 Page No. : 1/7 Features • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Pb-free lead plating package Symbol BTB826M3 Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation VCBO VCEO VEBO IC ICP Pd Power Dissipation Pd ESD susceptibility Junction Temperature Tj Storage Temperature Tstg Note : 1. Single Pulse , Pw=10ms 2. When mounting on a 40 ×40 ×0.7 mm ceramic board. 3.
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