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BTB818AG6 - PNP Transistor

Features

  • Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA.
  • Pb-free lead plating and halogen-free package Equivalent Circuit BTB818AG6 Outline TSOP-6 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current VCEO VEBO IC ICM IBM -30 -7 -3 -6.
  • 1 -500 V V A A mA Power Dissipation PD 1.2.
  • 2 W Therm.

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Datasheet Details

Part number BTB818AG6
Manufacturer CYStech
File Size 289.29 KB
Description PNP Transistor
Datasheet download datasheet BTB818AG6 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB818AG6 Spec. No. : C240G6 Issued Date : 2013.05.03 Revised Date : 2013.08.29 Page No. : 1/9 Features • Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA • Pb-free lead plating and halogen-free package Equivalent Circuit BTB818AG6 Outline TSOP-6 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current VCEO VEBO IC ICM IBM -30 -7 -3 -6 *1 -500 V V A A mA Power Dissipation PD 1.
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