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CTLM13PS05-R3 - P-Channel MOSFET

Description

The CTLM13PS05-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Features

  • Drain-Source Breakdown Voltage VDSS - 50 V.
  • Drain-Source On-Resistance RDS(ON) 5Ω, at VGS= - 5.0V, IDS= - 100mA ℃.
  • Continuous Drain Current at TA=25 ID = -130mA.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTLM13PS05-R3
Manufacturer CT Micro
File Size 509.76 KB
Description P-Channel MOSFET
Datasheet download datasheet CTLM13PS05-R3 Datasheet

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Full PDF Text Transcription

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CTLM13PS05-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 50 V • Drain-Source On-Resistance RDS(ON) 5Ω, at VGS= - 5.0V, IDS= - 100mA ℃• Continuous Drain Current at TA=25 ID = -130mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch Description The CTLM13PS05-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
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