CTL0025NS-R3 Datasheet PDF - CT Micro N-Channel MOSFET Specs

CTL0025NS-R3 - N-Channel MOSFET

Datasheet Summary

Description

The CTL0025NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

Drain-Source Breakdown Voltage VDSS 50 V.
Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.5V, ID= 0.2A ℃.
Continuous Drain Current at TA=25 ID = 0.2A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

Datasheet Details

Part number	CTL0025NS-R3
Manufacturer	CT Micro
File Size	735.27 KB
Description	N-Channel MOSFET
Datasheet	CTL0025NS-R3 Datasheet
Additional preview pages of the CTL0025NS-R3 datasheet.

📁 Similar Datasheet

CTL005 - AVERAGE RESPONDING AC CURRENT TRANSDUCERS (Red Lion)

CTL050 - AVERAGE RESPONDING AC CURRENT TRANSDUCERS (Red Lion)

CTL-10-S50-30F-CL - Clamp-on type AC Current Sensor (PRC Technologies)

CTL-12-S30-2.5Z - AC Current Sensor (URD)

CTL-12-S36-10 - AC Current Sensor (URD)

CTL-12-S36-10L1 - AC Current Sensor (URD)

CTL-12-S56-10 - AC Current Sensor (URD)

CTL-12-S56-10L - AC Current Sensor (URD)

CTL-12-S56-20 - AC Current Sensor (URD)

CTL-12L-10 - AC Current Sensor (URD)

Full PDF Text Transcription

Click to expand full text

CTL0025NS-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 50 V • Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.5V, ID= 0.2A ℃• Continuous Drain Current at TA=25 ID = 0.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Switches • Motor controls • Converters • Power supply circuits Description The CTL0025NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Published: May 20, 2020 |