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BUZ22
SIPMOS® POWER TRANSISTORS
FEATURE
• Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDS ID IDpuls IAR EAR
EAS
VGS RDS(on) PT tJ tstg
Drain-Source Voltage
Continuous Drain Current TC= 27°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 34 A, VDD = 25 V, RGS = 25 Ω L = 285.5 µH, Tj = 25°C Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation TC= 25°C Operating Temperature Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
RthJC RthJA
Ratings
Thermal Resistance, chip case Thermal Resistance, chip to ambient
Value
100 34 136 34 15
220
20 0.
BUZ22 Datasheet
