Type CEP1195 CEB1195 CEF1195
VDSS 900V
RDS(ON) 2.75Ω
ID 5A
@VGS 10V
900V 2.75Ω
5A
10V
900V 2.75Ω 5A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
N-Channel Enhancement Mode Field Effect Transistor
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CEP1195/CEB1195 CEF1195
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP1195 CEB1195 CEF1195
VDSS 900V
RDS(ON) 2.75Ω
ID 5A
@VGS 10V
900V 2.75Ω
5A
10V
900V 2.75Ω 5A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.