CEB10N4 - N-Channel MOSFET

CET

Key Features

Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7Ω 0.7Ω 0.7Ω 0.7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

CEB10N4 n-channel mosfet by CET - Datasheet Preview

Datasheet Details

Part number	CEB10N4
Manufacturer	CET
File Size	89.89 KB
Description	N-Channel MOSFET
Datasheet	CEB10N4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7Ω 0.7Ω 0.7Ω 0.7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.