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CEB12N65 - N-Channel Enhancement Mode Field Effect Transistor

Features

  • Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650V 650V RDS(ON) 0.73Ω 0.73Ω 0.73Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEB12N65
Manufacturer CET
File Size 384.19 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB12N65 Datasheet

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Full PDF Text Transcription

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CEP12N65/CEB12N65 CEF12N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650V 650V RDS(ON) 0.73Ω 0.73Ω 0.73Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM e 650 ±30 12 48 12 d 48d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 250 60 PD 1.67 0.
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