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NE67483B - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

This page provides the datasheet information for the NE67483B, a member of the NE67400 (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET family.

Datasheet Summary

Description

NEC's NE674 is a L to Ku Band low noise GaAs MESFET.

Features

  • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE,.

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Datasheet Details

Part number NE67483B
Manufacturer CEL
File Size 137.60 KB
Description (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
Datasheet download datasheet NE67483B Datasheet
Additional preview pages of the NE67483B datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTION NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiD2 and Si3N4 for scratch protection and surface stability. This device is suitable for both amplifier and oscillator applications.
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