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NE662M16 - NPN SILICON RF TRANSISTOR

Datasheet Summary

Features

  • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz.
  • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz.
  • 6-pin lead-less minimold package.

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Datasheet Details

Part number NE662M16
Manufacturer CEL
File Size 700.05 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet NE662M16 Datasheet
Additional preview pages of the NE662M16 datasheet.

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DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz • 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.
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