Datasheet4U Logo Datasheet4U.com

NE662M16-A - NPN SILICON RF TRANSISTOR

This page provides the datasheet information for the NE662M16-A, a member of the NE662M16 NPN SILICON RF TRANSISTOR family.

Datasheet Summary

Features

  • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz.
  • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz.
  • 6-pin lead-less minimold package.

📥 Download Datasheet

Datasheet preview – NE662M16-A

Datasheet Details

Part number NE662M16-A
Manufacturer CEL
File Size 700.05 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet NE662M16-A Datasheet
Additional preview pages of the NE662M16-A datasheet.

📁 Similar Datasheet

  • NE662M16-T3 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
  • NE662M16 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
  • NE66219 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
  • NE661M04 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
  • NE661M04-T2 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
  • NE663M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR (California Eastern Labs)
  • NE664M04 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
  • NE66719 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (California Eastern Labs)
  • NE600 - 1GHz LNA and mixer (NXP Semiconductors)
  • NE602 - NE602 (ETC)
Other Datasheets by CEL
  • NE662M16-T3-A - NPN SILICON RF TRANSISTOR
  • NE662M16 - NPN SILICON RF TRANSISTOR
  • NE662M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR
  • NE664M04-A - NPN SILICON RF TRANSISTOR
  • NE664M04-T2-A - NPN SILICON RF TRANSISTOR
  • NE6510179A - MEDIUM POWER GaAs HJ-FET
  • NE67400 - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
  • NE67483B - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

Full PDF Text Transcription

Click to expand full text
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz • 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.
Published: |