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CLF1G0035S-200P - Broadband RF power GaN HEMT

Download the CLF1G0035S-200P datasheet PDF. This datasheet also covers the CLF1G0035-200P variant, as both devices belong to the same broadband rf power gan hemt family and are provided as variant models within a single manufacturer datasheet.

Description

The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

Table 1.

CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board.

Features

  • Frequency of operatio.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CLF1G0035-200P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CLF1G0035S-200P
Manufacturer Ampleon
File Size 661.45 KB
Description Broadband RF power GaN HEMT
Datasheet download datasheet CLF1G0035S-200P Datasheet

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Other Datasheets by Ampleon

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Full PDF Text Transcription

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CLF1G0035-200P; CLF1G0035S-200P Broadband RF power GaN HEMT Rev. 1 — 22 April 2016 Product data sheet 1. Product profile 1.1 General description The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal f PL Gp D (MHz) (W) (dB) (%) 1-Tone CW 1700 200 11 47 2000 200 10 52 2300 200 9 58 1-Tone pulsed [1] 1700 200 14 46 2000 200 14 48 2300 200 13 51 [1] Pulsed RF; tp = 100 s;  = 10 %. Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 600 mA; VDS = 50 V in a class-AB broadband demo board.
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