Datasheet4U Logo Datasheet4U.com

CLF1G0035S-100 - Broadband RF power GaN HEMT

Download the CLF1G0035S-100 datasheet PDF. This datasheet also covers the CLF1G0035-100 variant, as both devices belong to the same broadband rf power gan hemt family and are provided as variant models within a single manufacturer datasheet.

Description

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.

Frequency of operation is from DC to 3.5 GHz.

Table 1.

Features

  • Frequency of operation is from DC to 3.5 GHz.
  • 100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT.
  • Excellent ruggedness (VSWR 10 : 1).
  • High voltage operation (50 V).
  • Thermally enhanced package 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CLF1G0035-100-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

Click to expand full text
CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW f (MHz) 500 1000 1500 2000 1-Tone pulsed [1] 500 1000 1500 2000 [1] Pulsed RF; tp = 50 s;  = 1 %. PL (W) 100 100 100 100 100 100 100 100 Gp (dB) 14.2 11.2 10.8 11.7 15.5 14 14.3 13.9 D (%) 61.6 47.9 46.4 53.3 67.4 52.9 53.7 59.5 Table 2.
Published: |