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CLF1G0035S-100P - Broadband RF power GaN HEMT

Download the CLF1G0035S-100P datasheet PDF. This datasheet also covers the CLF1G0035-100P variant, as both devices belong to the same broadband rf power gan hemt family and are provided as variant models within a single manufacturer datasheet.

Description

The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

Table 1.

CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 330 mA; VDS = 50 V in a class-AB broadband demo board.

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Note: The manufacturer provides a single datasheet file (CLF1G0035-100P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CLF1G0035S-100P
Manufacturer Ampleon
File Size 430.06 KB
Description Broadband RF power GaN HEMT
Datasheet download datasheet CLF1G0035S-100P Datasheet

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Other Datasheets by Ampleon

Part Number Description
CLF1G0035S-100 Broadband RF power GaN HEMT
CLF1G0035S-200P Broadband RF power GaN HEMT
CLF1G0035S-50 Broadband RF power GaN HEMT
CLF1G0035-100 Broadband RF power GaN HEMT
CLF1G0035-100P Broadband RF power GaN HEMT

Full PDF Text Transcription

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CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 4 — 24 February 2016 Product data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 330 mA; VDS = 50 V in a class-AB broadband demo board. Test signal f (MHz) PL Gp (W) (dB) D (%) 1-Tone CW 2500 100 12.8 51 2600 100 12.7 52.4 2700 100 12.3 50 2800 100 11.7 49 2900 100 11.5 49 3000 100 10.5 47 1-Tone pulsed [1] 2500 100 14.2 52 2600 100 14.4 54.4 2700 100 14.1 52.5 2800 100 13.7 51.5 2900 100 13.6 51.8 3000 100 12.7 50.1 [1] Pulsed RF; tp = 100 s;  = 10 %. Table 2.
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