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BLF7G24LS-100 - Power LDMOS transistor

Download the BLF7G24LS-100 datasheet PDF. This datasheet also covers the BLF7G24L-100 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G24L-100-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF7G24LS-100
Manufacturer Ampleon
File Size 421.45 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G24LS-100 Datasheet

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Other Datasheets by Ampleon

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Full PDF Text Transcription

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BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 18 27 46[1] - 1 carrier W-CDMA 2300 to 2400 900 28 30 18.7 33 - 40[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] 3GPP; test model 1; 64 DPCH; PAR = 7.
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