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BLF7G20LS-160P - Power LDMOS transistor

Download the BLF7G20LS-160P datasheet PDF. This datasheet also covers the BLF7G20L-160P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G20L-160P_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF7G20LS-200 Power LDMOS transistor Ampleon
BLF7G20LS-250P Power LDMOS transistor Ampleon
BLF7G20LS-90P Power LDMOS transistor Ampleon
BLF7G20L-200 Power LDMOS transistor Ampleon
BLF7G20L-250P Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF7G20LS-200 Power LDMOS transistor
BLF7G20L-160P Power LDMOS transistor
BLF7G20L-200 Power LDMOS transistor
BLF7G22L-250P Power LDMOS transistor
BLF7G22LS-250P Power LDMOS transistor

Full PDF Text Transcription

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www.DataSheet4U.com BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (mA) 850 850 VDS (V) 28 28 PL(AV) (W) 135 65 Gp (dB) 17.5 18.5 ηD (%) 57 43 ACPR400k (dBc) −61 ACPR600k (dBc) −74 EVMrms (%) 2.5 1.
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