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BLF7G24L-160P; BLF7G24LS-160P
Power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR885k
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
IS-95
2300 to 2400
1200 28 30
18.5 27.5 45.5[1]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.
BLF7G24L-160P Datasheet
