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BLC8G24LS-241AV
Power LDMOS transistor
Rev. 2 — 2 December 2016
Product data sheet
1. Product profile
1.1 General description
240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V, unless otherwise specified.
Test signal
f
VDS PL(AV)
Gp
D ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2300 to 2400
28 56
15 44 29 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.
BLC8G24LS-241AV Datasheet
