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BLC8G20LS-310AV
Power LDMOS transistor
Rev. 5 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(dBm) (dB) (%)
(dBc)
1-carrier W-CDMA
1930 to 1995
28
47.5 17
42.5
33 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier.
1.
BLC8G20LS-310AV Datasheet
