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BLC8G21LS-160AV
Power LDMOS transistor
Rev. 4 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.
Test signal
f
IDq VDS PL(AV)
(MHz)
(mA) (V) (W)
1-carrier W-CDMA
1805 to 1880
350 28 22
1-carrier W-CDMA
1880 to 2025
350 28 22
Gp D ACPR (dB) (%) (dBc) 16 49 30 [1] 15.5 47 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.
BLC8G21LS-160AV Datasheet
