Click to expand full text
BLC8G20LS-400AV
Power LDMOS transistor
Rev. 4 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.4 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
32
85
15.5 44
31 [1]
1930 to 1990
32
85
15.5 44
35 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01% probability on CCDF.
1.
BLC8G20LS-400AV Datasheet
