Datasheet Details
| Part number | AON6162 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 337.08 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 AON6162 Datasheet
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| Part number | AON6162 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 337.08 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
AON6162 Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 100A < 2.1mΩ < 2.9mΩ Applications • Secondary Synchronous Rectification MOSFET for Server and Telecom 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 Orderable Part Number AON6162 PIN1 Package Type DFN 5x6 Top View 1 8 2 7 3 6 4 5 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C VDS Spike I 10µs TC=25°C Power Dissipation B TC=100°C IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 100 100 400 44.5 35.5 53 421 72 215 86 7.3 4.7 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 0.43 Max 17 50 0.58 Units °C/W °C/W °C/W Rev.1.0: January 2016 www.aosmd.com Page 1 of 6 AON6162 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC
AON6162 60V N-Channel AlphaSGT TM General.
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