Datasheet Details
| Part number | AON6144 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 312.40 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet |
 AON6144 Datasheet
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| Part number | AON6144 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 312.40 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet |
AON6144 Datasheet
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 100A < 2.4mΩ < 3.5mΩ Applications • Synchronous Rectification for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring switches 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 Top View 18 27 36 45 D G S Orderable Part Number AON6144 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy VDS Spike I Power Dissipation B L=0.3mH 10µs TC=25°C TC=100°C C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 1.3 Maximum 40 ±20 100 89 285 40 32 33 163 48 78 31 6.2 4.0 -55 to 150 Max 20 50 1.6 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0: November 2015 www.aosmd.com Page 1 of 6 AON6144 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=40V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance
AON6144 40V N-Channel MOSFET General.
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