Datasheet Details
| Part number | AON6152A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 314.76 KB |
| Description | 45V N-Channel MOSFET |
| Datasheet |
 AON6152A Datasheet
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| Part number | AON6152A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 314.76 KB |
| Description | 45V N-Channel MOSFET |
| Datasheet |
AON6152A Datasheet
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 45V 100A < 1.15mΩ < 1.85mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested DFN5x6 D Top View Top View Bottom View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AON6152A Package Type DFN 5x6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 45 ±20 100 100 400 58 47 60 540 54 208 83 7.3 4.7 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.45 Max 17 50 0.6 Units °C/W °C/W °C/W Rev.1.0: November 2019 www.aosmd.com Page 1 of 6 AON6152A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=45V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diod
AON6152A 45V N-Channel AlphaSGT TM General.
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