Datasheet Details
| Part number | AOB11N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 465.21 KB |
| Description | 11A N-Channel MOSFET |
| Datasheet |
 AOB11N60 Datasheet
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| Part number | AOB11N60 |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 465.21 KB |
| Description | 11A N-Channel MOSFET |
| Datasheet |
AOB11N60 Datasheet
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The AOB11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 11A < 0.7Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOB11N60L TO-263 D2PAK D D S G AOB11N60 G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C C AOB11N60 600 ±30 11 8.0 39 4.8 345 690 5 272 2.2 -55 to 150 300 AOB11N60 65 0.5 0.46 Units V V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink Maximum Junction-to-Case A Rev 0: Jan 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AOB11N60 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Pulsed Current 1320 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 100 6.5 1.7 24 VGS=10V, VDS=480V, ID=11A 165
AOB11N60 600V,11A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB11N60 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOB1100L | 100V N-Channel Rugged Planar MOSFET |
| AOB11C60 | 11A N-Channel MOSFET |
| AOB11S60 | Power Transistor |
| AOB11S60L | Power Transistor |
| AOB11S65 | Power Transistor |
| AOB11S65L | 650V 11A Power Transistor |
| AOB10B60D | 10A Alpha IGBT |
| AOB10B65M1 | 10A Alpha IGBT |
| AOB10N60 | 10A N-Channel MOSFET |
| AOB10T60P | N-Channel MOSFET |