Datasheet Details
| Part number | AOB11C60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 470.47 KB |
| Description | 11A N-Channel MOSFET |
| Download | AOB11C60 Download (PDF) |
|
|
| Part number | AOB11C60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 470.47 KB |
| Description | 11A N-Channel MOSFET |
| Download | AOB11C60 Download (PDF) |
|
|
|
Product Summary The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT11C60L & AOB11C60L & AOTF11C60L VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F TO-263 D2PAK D 700 80A < 0.44Ω 30nC 5.1µJ D AOT11C60 S D S G S G AOTF11C60 GD G AOB11C60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11C60/AOB11C60 AOTF11C60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 11 11* 9 9* 80 11 60 750 100 20 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
AOT11C60/AOB11C60 65 0.5 0.45 AOTF11C60 65 -2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.3.0: Auguest 2014 www.aosmd.com Page 1 of 6 AOT11C60/AOB11C60/AOTF11C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Zero Gate Volt
AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AOB1100L | 100V N-Channel Rugged Planar MOSFET |
| AOB11N60 | 11A N-Channel MOSFET |
| AOB11S60 | Power Transistor |
| AOB11S60L | Power Transistor |
| AOB11S65 | Power Transistor |
| AOB11S65L | 650V 11A Power Transistor |
| AOB10B60D | 10A Alpha IGBT |
| AOB10B65M1 | 10A Alpha IGBT |
| AOB10N60 | 10A N-Channel MOSFET |
| AOB10T60P | N-Channel MOSFET |