Datasheet Details
| Part number | AOB10B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 1.11 MB |
| Description | 10A Alpha IGBT |
| Download | AOB10B65M1 Download (PDF) |
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| Part number | AOB10B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 1.11 MB |
| Description | 10A Alpha IGBT |
| Download | AOB10B65M1 Download (PDF) |
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• Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor Drives • Sewing Machines • Home Appliances • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220 TO-263 D2PAK C Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 10A 1.6V C AOT10B65M1 E GC E G AOB10B65M1 G E Orderable Part Number Package Type Form Minimum Order Quantity AOT10B65M1 TO220 Tube AOB10B65M1 TO263 Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10B65M1/AOB10B65M1 1000 800 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 20 A 10 Pulsed Collector Current, Limited by TJmax I CM 30 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 30 A Continuous Diode Forward Current TC=25°C TC=100°C IF 20 A 10 Diode Pulsed Current, Limited by TJmax I FM 30 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 ms Power Dissipation TC=25°C TC=100°C PD 150 75 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics 300 °C Parameter Symbol AOT10B65M1/AOB10B65M1 Units Maximum Junction-to-Ambient R q JA 65 °C/W Maximum IGBT Junction-to-Case R q JC 1 °C/W Maximum Diode Junction-to-Case R q JC 3.3 1) Allowed number of short circuits: <1000;
time between short circuits: >1s.
°C/W Rev.2.0: October 2022 www.aosmd.com Page 1 of 9 AOT(B)10B65M1 Electrical Characteristics (TJ=25°C unless otherwise note
AOT10B65M1/AOB10B65M1 650V, 10A Alpha IGBT TM With soft and fast recovery anti-parallel diode.
| Part Number | Description |
|---|---|
| AOB10B60D | 10A Alpha IGBT |
| AOB10N60 | 10A N-Channel MOSFET |
| AOB10T60P | N-Channel MOSFET |
| AOB1100L | 100V N-Channel Rugged Planar MOSFET |
| AOB11C60 | 11A N-Channel MOSFET |
| AOB11N60 | 11A N-Channel MOSFET |
| AOB11S60 | Power Transistor |
| AOB11S60L | Power Transistor |
| AOB11S65 | Power Transistor |
| AOB11S65L | 650V 11A Power Transistor |