Datasheet Details
| Part number | AOB10T60P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 499.08 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOB10T60P Datasheet
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| Part number | AOB10T60P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 499.08 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AOB10T60P Datasheet
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• Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D Top View TO-220F TO-263 D2PAK D 700V 40A < 0.7Ω 26nC 3.5µJ D AOT10T60P S D G AOTF10T60P GD S G AOB10T60P S G S Orderable Part Number AOT10T60PL AOB10T60PL AOTF10T60P AOTF10T60PL Package Type TO-220 Green TO-263 Green TO-220F Pb Free TO-220F Green Form Tube Tape & Reel Tube Tube Minimum Order Quantity 1000 800 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)10T60P Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J VDS VGS ID IDM IAR EAR EAS dv/dt 10 6.6 TC=25°C Power Dissipation B Derate above 25°C PD 208 1.7 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL AOTF10T60P 600 ±30 10* 6.6* 40 10 50 480 50 15 43 0.3 -55 to 150 300 AOTF10T60PL 10* 6.6* 33 0.26 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT(B)10T60P 65 0.5 Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
0.6 AOTF10T60P 65 -2.9 AOTF10T60PL 65 -3.8 Units °C/W °C/W °C/W Rev.2.0: March 2014 www.aosmd.com Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Brea
AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AOB10B60D | 10A Alpha IGBT |
| AOB10B65M1 | 10A Alpha IGBT |
| AOB10N60 | 10A N-Channel MOSFET |
| AOB1100L | 100V N-Channel Rugged Planar MOSFET |
| AOB11C60 | 11A N-Channel MOSFET |
| AOB11N60 | 11A N-Channel MOSFET |
| AOB11S60 | Power Transistor |
| AOB11S60L | Power Transistor |
| AOB11S65 | Power Transistor |
| AOB11S65L | 650V 11A Power Transistor |