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SSC8124GSB - N-Channel Enhancement Mode MOSFET

Description

on-state resistance.

Features

  • s VDS VGS RDSon TYP 22mR@4V5 ID.

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Datasheet Details

Part number SSC8124GSB
Manufacturer AFSEMI
File Size 112.93 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8124GSB Datasheet

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Full PDF Text Transcription

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SSC8124GSB N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 22mR@4V5 ID  Applications  Load Switch  Portable Devices  DCDC Conversion 20V ±8V 25mR@2V5 32mR@1V8 5.6A  Pin configuration  General Description This device is produced with high cell density DMOS Top View DD trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small 1D D outline surface mount package. Excellent thermal and electrical capabilities.  Package Information S G ⑥ ⑤④ ①② ③ Units:mm SOT23-6L SSC-V1.0 http://www.afsemi.
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