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SSC8120GS8 - N-Channel Enhancement Mode MOSFET

Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Package Information Appli

Features

  • s.
  • VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8.
  • General.

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Datasheet Details

Part number SSC8120GS8
Manufacturer AFSEMI
File Size 252.20 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8120GS8 Datasheet

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Full PDF Text Transcription

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SSC8120GS8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8   General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin Configuration Top View DD 33 12 GS 1 S Package:SOT523 Unit:mm Dim Min Typ Max A 0.15 0.22 0.30 B 0.75 0.80 0.85 C 1.45 1.60 1.75 D -- 0.50 -- G 0.90 1.00 1.10 H 1.
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